Figure 11From: 3D finite element modeling and simulation of industrial semiconductor devices including impact ionization n -MOSFET: electron current density streamlines obtained with method A. Left: On-state at \(V_{G}=1 \mbox { V}\) and \(V_{D}=0.1 \mbox { V}\). Right: Off-state at \(V_{G}=0 \mbox { V}\) and \(V_{D}=0.85 \mbox { V}\).Back to article page