Figure 3From: 3D finite element modeling and simulation of industrial semiconductor devices including impact ionization n -MOSFET electron concentration at \(\pmb{V_{\mathrm{Gate}}=2 \mbox { V}}\) and \(\pmb{V_{\mathrm{Drain}}=0.1 \mbox { V}}\) . Left: FEMOS calculation. Right: Ref. [30] calculation.Back to article page