Figure 7From: 3D finite element modeling and simulation of industrial semiconductor devices including impact ionization Hole current density calculation of p -MOSFET at \(\pmb{V_{G}=-1.0 \mbox { V}}\) and \(\pmb{V_{D}=-0.1 \mbox { V}}\) : Top left: Method DDFE. Top right: Method A. Bottom: Method B.Back to article page