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Figure 1 | Journal of Mathematics in Industry

Figure 1

From: Chaos-based true random number generators

Figure 1

Sketch of superlattice in a circuit and field profile during oscillations. Sketch of a mesa-shaped semiconductor superlattice device having 0.15 mm side and 1.5 μm thickness. (a) dc voltage biased superlattice consisting of two contact regions of about 0.5 μm width and 50 periods formed by two semiconductor layers of different bandgaps as depicted in (b). (c) Electric field profiles at different times of one oscillation period for a 7.532 V bias. High-field electric field domains (that are charge dipoles) are periodically triggered at the injector, move towards the collector and disappear there.

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