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Table 1 Silicon nanowire constants

From: Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

Symbol

Physical constant

Value

\(m_{e}\)

electron rest mass

9.1095 × 10−28 g

mA

effective mass \(A =\Delta _{4}\) valley [9]

0.27 \(m_{e}\)

mB

effective mass \(B =\Delta _{2}\) valley [9]

0.94 \(m_{e}\)

\(T_{L}\)

lattice temperature

300 K

ρ

mass density

2.33 g/cm3

\(v_{s}\)

average sound speed

9 × 105 cm/s

\(D_{ac}\)

acoustic-phonon deformation potential

9 eV

\(D_{o}\)

intra-valley deformation potential g-scat [27]

1.1 × 109 eV/cm

\(\sim \omega _{o}\)

intra-valley phonon energy [27]

63.3 meV

\(Z_{o}\)

number equivalent valleys [27]

1

\(D_{iv}\)

inter-valley deformation potential f-scat [27]

2 × 108 eV/cm

\(\sim \omega _{iv}\)

inter-valley phonon energy [27]

47.48 meV

\(Z_{iv}\)

number equivalent valleys [27]

2

\(\varepsilon_{0_{A}}\)

\(A =\Delta _{4}\) valley energy minimum [9]

0

\(\varepsilon_{0_{B}}\)

\(B =\Delta _{2}\) valley energy minimum [9]

117 meV

\(\Delta_{\mathrm{sr}}\)

rms height [27]

0.3 nm

\(\lambda_{\mathrm{sr}}\)

correlation length [27]

1.5 nm