Figure 5From: Drift-diffusion models for the simulation of a graphene field effect transistorHole density of the simulated GFET in the case \(V_{b}=0.2\text{ V}\) and \(V_{G}=-1.5\) and 1.5 V. On the left the adopted model is (1), (2); on the right it is (1), (4)Back to article page